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Título

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

AutorGarcía-Hernández, M.; Ferrer, F. J.
Fecha de publicación2013
Citación9th Spanish Conference on Electron Devices (2013)
ResumenHydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
DescripciónTrabajo presentado a la 9th Spanish Conference on Electron Devices (CDE) celebrada en Valladolid (España) del 12 al 14 de febrero de 2013.-- et al.
URIhttp://hdl.handle.net/10261/123292
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