English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/123292
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

AuthorsGarcía-Hernández, M. ; Ferrer, F. J.
Issue Date2013
Citation9th Spanish Conference on Electron Devices (2013)
AbstractHydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
DescriptionTrabajo presentado a la 9th Spanish Conference on Electron Devices (CDE) celebrada en Valladolid (España) del 12 al 14 de febrero de 2013.-- et al.
URIhttp://hdl.handle.net/10261/123292
Appears in Collections:(CNA) Comunicaciones congresos
Files in This Item:
File Description SizeFormat 
HIT solar cells.pdf374,35 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.