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Title: | Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings |
Authors: | Alén, Benito CSIC ORCID; Bosch, José; Martínez Pastor, Juan Pascual; Granados, Daniel CSIC ORCID; García Martínez, Jorge Manuel CSIC ORCID CVN ; González Sotos, Luisa | Keywords: | Indium compounds Gallium arsenide III-V semiconductors Semiconductor quantum dots Self-assembly Photoluminescence Time resolved spectra Radiative lifetimes Electron-hole recombination Tunnelling Effective mass |
Issue Date: | 10-Jan-2007 | Publisher: | American Physical Society | Citation: | Physical Review B 75, 045319 (2007) | Abstract: | We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation. | Publisher version (URL): | http://link.aps.org http://dx.doi.org/10.1103 |
URI: | http://hdl.handle.net/10261/12322 | DOI: | 10.1103/PhysRevB.75.045319 | ISSN: | 1098-0121 |
Appears in Collections: | (IMN-CNM) Artículos |
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Alen, B. et al PhysRevB_75_2007.pdf | 748,46 kB | Adobe PDF | ![]() View/Open |
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