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Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

AutorAlén, Benito ; Bosch, José; Martínez-Pastor, Juan; Granados, Daniel ; García Martínez, Jorge Manuel ; González Sotos, Luisa
Palabras claveIndium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Photoluminescence
Time resolved spectra
Radiative lifetimes
Electron-hole recombination
Tunnelling
Effective mass
Fecha de publicación10-ene-2007
EditorAmerican Physical Society
CitaciónPhysical Review B 75, 045319 (2007)
ResumenWe have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
Versión del editorhttp://link.aps.org
http://dx.doi.org/10.1103
URIhttp://hdl.handle.net/10261/12322
DOI10.1103/PhysRevB.75.045319
ISSN1098-0121
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