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Title

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

AuthorsRipalda, José María CSIC ORCID ; Alonso-Álvarez, Diego CSIC; Alén, Benito CSIC ORCID; Taboada, Alfonso G.; García Martínez, Jorge Manuel CSIC ORCID CVN ; González Díez, Yolanda; González Sotos, Luisa
KeywordsIndium compounds
Gallium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Monolayers
Luminescence
Issue Date5-Jul-2007
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 91, 012111 (2007)
AbstractThe authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 µm emission wavelength.
Publisher version (URL)http://link.aip.org
http://d.doi.org/10.1063/1.2753716
URIhttp://hdl.handle.net/10261/12275
DOI10.1063/1.2753716
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos

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