English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/12273
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Excitons in coupled InAs/InP self-assembled quantum wires

AuthorsSidor, Y.; Partoens, B.; Peeters, F. M.; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.; Sales, David L.; Fuster, David ; González Sotos, Luisa ; González Díez, Yolanda
KeywordsExcitons
Indium compounds
III-V semiconductors
Semiconductor quantum wires
Ground states
Excited states
Photoluminescence
Issue Date29-Mar-2007
PublisherAmerican Physical Society
CitationPhysical Review B 75, 125120 (2007)
AbstractOptical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective-mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states, and the photoluminescence peak energies are calculated. Where possible, we compare with available photoluminescence data from which it was possible to determine the height of the quantum wires. An anticrossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the exciton wave function. This crossing is the signature of two different coupling regimes.
Publisher version (URL)http://link.aps.org
http://dx.doi.org/10.1103/PhysRevB.75.125120
URIhttp://hdl.handle.net/10261/12273
DOI10.1103/PhysRevB.75.125120
ISSN1098-0121
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Sidor, Y. et al PhysRevB_75_2007.pdf609,78 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.