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Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

AutorBeltrán, Ana M.; Duguay, S.; Strenger, C.; Cristiano, F.; Schamm-Chardon, S.
Fecha de publicación2015
CitaciónSolid State Communications, 221: 28-32 (2015)
ResumenThe breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO2 interface.
Versión del editorhttp://dx.doi.org/10.1016/j.ssc.2015.08.017
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