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Título

Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity

AutorSharma, P.; Catalán, Gustau ; Gruverman, Alexei
Palabras claveComplex oxides
Heterointerfaces
2D electron gas
Memristors
Resistive switching
Fecha de publicación13-may-2015
EditorAmerican Chemical Society
CitaciónNano Letters 15(5): 3547–3551 (2015)
ResumenIn recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. The highly conductive state at the interface between insulators LaAlO3 and SrTiO3 is a prime example of such emergent functionality, with potential application in high electron density transistors. In this report, we demonstrate a new paradigm for voltage-free tuning of LaAlO3/SrTiO3 (LAO/STO) interface conductivity, which involves the mechanical gating of interface conductance through stress exerted by the tip of a scanning probe microscope. The mechanical control of channel conductivity and the long retention time of the induced resistance states enable transistor functionality with zero gate voltage.
DescripciónSharma, P. et al.
Versión del editorhttp://dx.doi.org/10.1021/acs.nanolett.5b01021
URIhttp://hdl.handle.net/10261/121333
DOI10.1021/acs.nanolett.5b01021
ISSN1530-6984
E-ISSN1530-6992
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