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Optical investigation of type II GaSb/GaAs self-assembled quantum dots

AutorAlonso-Álvarez, Diego ; Alén, Benito ; García Martínez, Jorge Manuel ; Ripalda, José María
Palabras claveGallium arsenide
Gallium compounds
III-V semiconductors
Photoconductivity
Photoluminescence
Self-assembly
Semiconductor quantum dots
Wetting
Fecha de publicación26-dic-2007
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 91, 263103 (2007)
ResumenWe have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ~500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system
Versión del editorhttp://dx.doi.org/10.1063/1.2827582
http://link.aip.org/link
URIhttp://hdl.handle.net/10261/11941
DOI10.1063/1.2827582
ISSN0003-6951
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