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Título: | Incorporation of Sb in InAs/GaAs quantum dots |
Autor: | Molina, Sergio I.; Sánchez, A. M.; Beltrán, A. M.; Sales, David L.; Ben, Teresa; Chisholm, M. F.; Varela, María; Pennycook, Stephen J.; Galindo, P. L.; Papworth, A. J.; Goodhew, P. J.; Ripalda, José María CSIC ORCID | Palabras clave: | Quantum dots Cobalt alloys elemental semiconductors Scanning tunnelling microscopy self-assembly Silicon alloys Silicon surface reconstruction |
Fecha de publicación: | 27-dic-2007 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 91, 263105 (2007) | Resumen: | Reactive epitaxy of Co on vicinal Si(111) surfaces is found to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots. In the present work, submonolayer amounts of Co were deposited at 800 K on vicinal and flat Si surfaces, analyzing the resulting structures by scanning tunneling microscopy. On vicinal Si(111) surfaces with relatively narrow (~40–100 Å) terrace width, such reactive epitaxy leads to self-assembled arrays of CoSi2 quantum dots with a sharp size distribution function. In contrast, the growth of Co on flat Si(111) results in an inhomogeneous array of dots mixed with a variety of silicide phases | Versión del editor: | http://dx.doi.org/10.1063/1.2826546 http://link.aip.org/link |
URI: | http://hdl.handle.net/10261/11936 | DOI: | 10.1063/1.2826546 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Molina, S.I. et al ApplPhysLett_91_2007.pdf | 356,37 kB | Adobe PDF | Visualizar/Abrir |
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