1. DIGITAL.CSIC
  2. Ciencia y Tecnologías Físicas
  3. Instituto de Micro y Nanotecnología (IMN-CNM)
  4. (IMN-CNM) Artículos
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/11899
COMPARTIR / EXPORTAR:
logo share SHARE logo core CORE BASE

Comparte tu historia
de Acceso Abierto
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Invitar a revisión por pares abierta
Campo DC Valor Lengua/Idioma
dc.contributor.authorGerardot, B. D.-
dc.contributor.authorSeidl, Stefan-
dc.contributor.authorDalgarno, P. A.-
dc.contributor.authorWarburton, Richard J.-
dc.contributor.authorGranados, Daniel-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.contributor.authorKowalik, K.-
dc.contributor.authorKrebs, O.-
dc.contributor.authorKarrai, Khaled-
dc.contributor.authorBadolato, Antonio-
dc.contributor.authorPetroff, Pierre M.-
dc.date.accessioned2009-03-27T12:33:30Z-
dc.date.available2009-03-27T12:33:30Z-
dc.date.issued2007-01-22-
dc.identifier.citationApplied Physics Letters 90, 041101 (2007)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/11899-
dc.description.abstractThe fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.en_US
dc.description.sponsorshipThe authors acknowledge financial support for this work from SANDIE (EU), EPSRC (UK), (ES) MEC, and CAM (TEC-2005-05781-C03-01, NAN2004-09109-C04-001, QOIT CSD2006-0019, and S-505/ESP/000200) and DAAD (DE).en_US
dc.format.extent183757 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectExcitonsen_US
dc.subjectFine structureen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectIndium compoundsen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectStark effecten_US
dc.subjectPhotoluminescenceen_US
dc.titleManipulating exciton fine structure in quantum dots with a lateral electric fielden_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.2431758-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2431758en_US
dc.relation.publisherversionhttp://link.aip.orgen_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.grantfulltextopen-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.openairetypeartículo-
Aparece en las colecciones: (IMN-CNM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato
Gerardot B.D. et al ApplPhysLett_90_2007.pdf179,45 kBAdobe PDFVista previa
Visualizar/Abrir
Show simple item record

CORE Recommender

SCOPUSTM   
Citations

189
checked on 06-abr-2024

WEB OF SCIENCETM
Citations

178
checked on 27-feb-2024

Page view(s)

433
checked on 16-abr-2024

Download(s)

390
checked on 16-abr-2024

Google ScholarTM

Check

Altmetric

Altmetric


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.