English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11899
logo share SHARE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Manipulating exciton fine structure in quantum dots with a lateral electric field

AuthorsGerardot, B. D.; Seidl, Stefan; Dalgarno, P. A.; Warburton, Richard J.; Granados, Daniel ; García Martínez, Jorge Manuel ; Kowalik, K.; Krebs, O.; Karrai, Khaled; Badolato, Antonio; Petroff, Pierre M.
Fine structure
Semiconductor quantum dots
Indium compounds
Gallium arsenide
III-V semiconductors
Stark effect
Issue Date22-Jan-2007
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 90, 041101 (2007)
AbstractThe fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.
Publisher version (URL)http://dx.doi.org/10.1063/1.2431758
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Gerardot B.D. et al ApplPhysLett_90_2007.pdf179,45 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.