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Title

Manipulating exciton fine structure in quantum dots with a lateral electric field

AuthorsGerardot, B. D.; Seidl, Stefan; Dalgarno, P. A.; Warburton, Richard J.; Granados, Daniel ; García Martínez, Jorge Manuel ; Kowalik, K.; Krebs, O.; Karrai, Khaled; Badolato, Antonio; Petroff, Pierre M.
KeywordsExcitons
Fine structure
Semiconductor quantum dots
Indium compounds
Gallium arsenide
III-V semiconductors
Stark effect
Photoluminescence
Issue Date22-Jan-2007
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 90, 041101 (2007)
AbstractThe fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.
Publisher version (URL)http://dx.doi.org/10.1063/1.2431758
http://link.aip.org
URIhttp://hdl.handle.net/10261/11899
DOI10.1063/1.2431758
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos
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