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Electrical transport properties of CaB6

AutorStankiewicz, Jolanta; Sesé Monclús, Javier ; Balakrishnan, Geetha; Fisk, Zachary
Fecha de publicación2014
EditorAmerican Physical Society
CitaciónPhysical Review B 90: 155128 (2014)
ResumenWe report results from a systematic electron-transport study in a broad temperature range on 12 CaB6 single crystals. None of the crystals were intentionally doped. The different carrier densities observed presumably arise from slight variations in the Ca:B stoichiometry. In these crystals, the variation of the electrical resistivity and of the Hall effect with temperature can be consistently accounted for by the model we propose, in which B-antisite defects (B atom replacing Ca atom) are >amphoteric.> The magnetotransport measurements reveal that most of the samples we have studied are close to a metal-insulator transition at low temperatures. The magnetoresistance changes smoothly from negative - for weakly metallic samples - to positive values - for samples in a localized regime.
DescripciónUnder the terms of the Creative Commons Attribution License 3.0 (CC-BY).
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.90.155128
URIhttp://hdl.handle.net/10261/118284
DOI10.1103/PhysRevB.90.155128
Identificadoresdoi: 10.1103/PhysRevB.90.155128
issn: 1098-0121
e-issn: 1550-235X
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