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dc.contributor.authorNesterov, M. L.-
dc.contributor.authorNikitin, Alexey Y.-
dc.contributor.authorSlipchenko, Tetiana M.-
dc.contributor.authorMartín-Moreno, Luis-
dc.contributor.authorGarcía de Abajo, Francisco Javier-
dc.contributor.authorHillenbrand, Rainer-
dc.date.accessioned2015-07-13T09:47:22Z-
dc.date.available2015-07-13T09:47:22Z-
dc.date.issued2013-
dc.identifierdoi: 10.1021/nl403622t-
dc.identifierissn: 1530-6984-
dc.identifiere-issn: 1530-6992-
dc.identifier.citationNano Letters 13(12): 6210-6215 (2013)-
dc.identifier.urihttp://hdl.handle.net/10261/117874-
dc.descriptionet al.-
dc.description.abstractWe employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20% of its value at graphene edges, and it approaches 50% for step heights as small as 5 nm. This intriguing observation is corroborated by numerical simulations and explained by the accumulation of a line charge at the graphene termination. The associated electromagnetic fields at the graphene termination decay within a few nanometers, thus preventing efficient plasmon transmission across nanoscale gaps. Our work suggests that plasmon propagation in graphene-based circuits can be tailored using extremely compact nanostructures, such as ultranarrow gaps. It also demonstrates that tip-enhanced near-field microscopy is a powerful contactless tool to examine nanoscale defects in graphene. © 2013 American Chemical Society.-
dc.description.sponsorshipR.H. acknowledges support by the ERC Starting Grant 258461 (TERATOMO) and the National Project MAT2012-36580 from the Spanish Ministerio de Ciencia e Innovación. M.L.N., A.Y.N., T.M.S., and L.M.M. acknowledge the Spanish Ministry of Science and Innovation Grant MAT2011-28581-C02. S.T. and F.J.G.A. acknowledge support from the Spanish MEC (contract no. MAT2010-14885). The work of I.C. and A.B.K. was supported by Swiss National Science Foundation (Grant 200020-140710). F.H.L.K. acknowledges support by the Fundacicio Cellex Barcelona, the ERC Career integration grant 294056 (GRANOP) and the ERC starting grant 307806 (CarbonLight). We acknowledge support by the E.C. under Graphene Flagship (contract no. CNECT-ICT-604391).-
dc.publisherAmerican Chemical Society-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/258461-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/294056-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/307806-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/604391-
dc.rightsclosedAccess-
dc.subjectGraphene-
dc.subjectPlasmon reflection-
dc.subjectSiC-
dc.subjectGraphene plasmons-
dc.subjects-SNOM-
dc.subjectNear-field microscopy-
dc.titleStrong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC-
dc.typeartículo-
dc.identifier.doihttp://dx.doi.org/10.1021/nl403622t-
dc.date.updated2015-07-13T09:47:22Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.contributor.funderEuropean Commission-
dc.contributor.funderMinisterio de Ciencia e Innovación (España)-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.contributor.funderSwiss National Science Foundation-
dc.contributor.funderEuropean Research Council-
dc.contributor.funderFundació Privada Cellex-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100004837es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
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