English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/117639
COMPARTIR / IMPACTO:
Estadísticas
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Título

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

AutorVilaplana, R.; Manjón, F. J.; Muñoz, Asunción; Sanjuán, M. L.; Alonso-Gutiérrez, P.
Fecha de publicación2013
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 113(23): 233501 (2013)
ResumenHigh-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. © 2013 AIP Publishing LLC.
DescripciónUnder the terms of the Creative Commons Attribution 3.0 Unported License.-- Trabajo presentado a la 49th European High Pressure Research Group Conference (EHPRG), celebrada en Mumbai (India) del 25 al 30 de septiembre de 2011.-- et al.
Versión del editorhttp://dx.doi.org/10.1063/1.4810854
URIhttp://hdl.handle.net/10261/117639
DOI10.1063/1.4810854
Identificadoresdoi: 10.1063/1.4810854
issn: 0021-8979
e-issn: 1089-7550
Aparece en las colecciones: (ICMA) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
High-pressureRaman .pdf2,43 MBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.