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dc.contributor.authorYan, Geng-
dc.contributor.authorPfattner, Raphael-
dc.contributor.authorCampos García, Antonio-
dc.contributor.authorWei, Wang-
dc.contributor.authorJeannin, Olivier-
dc.contributor.authorHauser, Jürg-
dc.contributor.authorPuigdollers-González, Joaquim-
dc.contributor.authorBromley, Stefan T.-
dc.contributor.authorDecurtins, Silvio-
dc.contributor.authorVeciana, Jaume-
dc.contributor.authorRovira, Concepció-
dc.contributor.authorMas Torrent, Marta-
dc.contributor.authorShi-Xia, Liu-
dc.date.accessioned2015-07-01T11:50:18Z-
dc.date.available2015-07-01T11:50:18Z-
dc.date.issued2014-08-12-
dc.identifier.citationChemistry - a European Journal 20(50):16672-16679 (2014)es_ES
dc.identifier.issn0947-6539-
dc.identifier.urihttp://hdl.handle.net/10261/117434-
dc.description.abstractThree new organic semiconductors, in which either two methoxy units are directly linked to a dibenzotetrathiafulvalene (DB-TTF) central core and a 2,1,3-chalcogendiazole is fused on the one side, or four methoxy groups are linked to the DB-TTF, have been synthesised as active materials for organic field-effect transistors (OFETs). Their electrochemical behaviour, electronic absorption and fluorescence emission as well as photoinduced intramolecular charge transfer were studied. The electron-withdrawing 2,1,3-chalcogendiazole unit significantly affects the electronic properties of these semiconductors, lowering both the HOMO and LUMO energy levels and hence increasing the stability of the semiconducting material. The solution-processed single-crystal transistors exhibit high performance with a hole mobility up to 0.04 cm2 V−1 s−1 as well as good ambient stability.es_ES
dc.description.sponsorshipFinancial support for this research by the Swiss National Science Foundation (Grant No. 200021–147143), ERC StG 2012– 306826 e-GAMES, the Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), the DGI (Spain) with project BE-WELL CTQ2013–40480-R, TEC2011– 27859-C02–01, and MAT2012–30924, the Generalitat de Catalunya with project 2014-SGR-17, as well as by the National Natural Science Foundation of China (No. 21175077)es_ES
dc.language.isoenges_ES
dc.publisherWiley-VCHes_ES
dc.relation.isversionofPostprintes_ES
dc.rightsopenAccessen_EN
dc.subjectDonor–acceptores_ES
dc.subjectsystemses_ES
dc.subjectFused-ringes_ES
dc.subjectsystemses_ES
dc.subjectMoleculares_ES
dc.subjectelectronicses_ES
dc.subjectSemiconductorses_ES
dc.subjectThines_ES
dc.subjectfilmses_ES
dc.titleHOMO Stabilisation in p-Extended Dibenzotetrathiafulvalene Derivatives for Their Application in Organic Field-Effect Transistorses_ES
dc.typeartículoes_ES
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://onlinelibrary.wiley.com/doi/10.1002/chem.201404508/epdfes_ES
dc.embargo.terms2015-08-12es_ES
dc.relation.csices_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
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