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Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

AuthorsPostigo, Pablo Aitor ; Suárez Arias, Ferrán ; Sanz-Hervás, A.; Sangrador, J.; Fonstad, C. G.
KeywordsGallium arsenide
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Rapid thermal annealing
Reflection high energy electron diffraction
Semiconductor epitaxial layers
Semiconductor growth
X-ray diffraction
Issue Date9-Jan-2008
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 103(1): 013508 (2008)
AbstractDirect heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200°C and different doses of H* were used; after this, the growth proceeded without H* while the temperature was increased slowly with time. The incorporation of H* drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.
Description5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi.
Publisher version (URL)http://dx.doi.org/10.1063/1.2824967
Appears in Collections:(IMN-CNM) Artículos
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