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Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

AuthorsAngelova, T.; Cros, A.; Cantarero, Andrés; Fuster, David ; González Sotos, Luisa ; González Díez, Yolanda
Critical points
III-V semiconductors
Indium compounds
Raman spectra
Semiconductor quantum wires
Issue Date6-Aug-2008
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 104, 033523 (2008)
AbstractSelf-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.
Publisher version (URL)http://dx.doi.org/10.1063/1.2963703
Appears in Collections:(IMN-CNM) Artículos
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