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dc.contributor.authorAngelova, T.-
dc.contributor.authorCros, A.-
dc.contributor.authorCantarero, Andrés-
dc.contributor.authorFuster, David-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.date.accessioned2009-03-17T13:06:18Z-
dc.date.available2009-03-17T13:06:18Z-
dc.date.issued2008-08-06-
dc.identifier.citationJournal of Applied Physics 104, 033523 (2008)en_US
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10261/11697-
dc.descriptionhttp://link.aip.org/link/?JAPIAU/104/033523/1en_US
dc.description.abstractSelf-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.en_US
dc.description.sponsorshipThe authors are thankful to the Ministry of Education and Science of Spain (Project No. MAT2006-01825,FEDER), the Generalitat Valenciana, and the European Network SANDIE (Grant No. NMP4-CT-2004-500101) for financial support.en_US
dc.format.extent478721 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectAnnealingen_US
dc.subjectCritical pointsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectPhononsen_US
dc.subjectRaman spectraen_US
dc.subjectSelf-assemblyen_US
dc.subjectSemiconductor quantum wiresen_US
dc.titleRaman study of self-assembled InAs/InP quantum wire stacks with varying spacer thicknessen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.2963703-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2963703en_US
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