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Title

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

AuthorsMartínez Pastor, Juan Pascual ; Fuster, David ; Abellán Rubio, María de los Ángeles ; Anguita, José Virgilio ; Sochinskii, N. V.
KeywordsCadmium compounds
Etching
II-VI semiconductors
Impurities
Ion beam assisted deposition
MOCVD
Photoluminescence
Sapphire
Semiconductor epitaxial layers
Spectral line intensity
Vapour phase epitaxial growth
Issue Date10-Mar-2008
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 103, 056108 (2008)
AbstractWe demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.
Descriptionhttp://link.aip.org/link/?JAPIAU/103/056108/1
Publisher version (URL)http://dx.doi.org/10.1063/1.2874480
URIhttp://hdl.handle.net/10261/11694
DOI10.1063/1.2874480
ISSN0021-8979
Appears in Collections:(IMN-CNM) Artículos
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