English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11690
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

AuthorsAlonso-Álvarez, Diego ; Taboada, Alfonso G.; Ripalda, José María ; Alén, Benito ; González Díez, Yolanda ; González Sotos, Luisa ; García Martínez, Jorge Manuel ; Briones Fernández-Pola, Fernando ; Martí Vega, Antonio; Luque López, Antonio; Sánchez, A. M.; Molina, Sergio I.
KeywordsElectron-hole recombination
Gallium arsenide
III-V semiconductors
Photovoltaic cells
Semiconductor quantum dots
Solar cells
Thermal stability
Issue Date25-Sep-2008
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 93, 123114 (2008)
AbstractIn this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.
Description3 páginas, 3 figuras.
Publisher version (URL)http://dx.doi.org./10.1063/1.2978243
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
GetPDFServlet.pdf487,36 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.