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Título

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

AutorUrresti, J.; Hidalgo, S.; Flores, D.; Hevia, D.F.
Fecha de publicación2014
EditorInstitution of Engineering and Technology
CitaciónIET Computers and Digital Techniques 8: 182- 187 (2014)
ResumenAn intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor.
URIhttp://hdl.handle.net/10261/116508
DOI10.1049/iet-cds.2013.0213
Identificadoresdoi: 10.1049/iet-cds.2013.0213
issn: 1751-8601
Aparece en las colecciones: (IMB-CNM) Artículos
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