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| Título: | Low density InAs quantum dots with control in energy emission and top surface location |
| Autor: | Alonso-González, Pablo  ; Martín-Sánchez, Javier; González Díez, Yolanda ; González Sotos, Luisa ; Fuster, David |
| Palabras clave: | III-V semiconductors Indium compounds Liquid phase epitaxial growth Photoluminescence Semiconductor epitaxial layers Semiconductor growth Semiconductor quantum dots Wide band gap semiconductors |
| Fecha de publicación: | 4-nov-2008 |
| Editor: | American Institute of Physics |
| Citación: | Applied Physics Letters; 93, 183106 (2008) |
| Resumen: | In this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to tune the QD energy emission over a range of 1.12–1.40 eV while keeping constant the nanostructures density at 2×108 cm−2. Moreover, the capping growth process of these QD shows mounding features that permit their spatial identification once embedded by a GaAs capping layer. |
| Versión del editor: | http://dx.doi.org/10.1063/1.3021070 |
| URI: | http://hdl.handle.net/10261/11505 |
| DOI: | 10.1063/1.3021070 |
| ISSN: | 0003-6951 |
| Aparece en las colecciones: | (IMN-CNM) Artículos |
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| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| GetPDFServlet.pdf | 315,23 kB | Adobe PDF |  Visualizar/Abrir |
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