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Low density InAs quantum dots with control in energy emission and top surface location

AuthorsAlonso-González, Pablo ; Martín-Sánchez, Javier; González Díez, Yolanda ; González Sotos, Luisa ; Fuster, David
KeywordsIII-V semiconductors
Indium compounds
Liquid phase epitaxial growth
Semiconductor epitaxial layers
Semiconductor growth
Semiconductor quantum dots
Wide band gap semiconductors
Issue Date4-Nov-2008
PublisherAmerican Institute of Physics
CitationApplied Physics Letters; 93, 183106 (2008)
AbstractIn this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to tune the QD energy emission over a range of 1.12–1.40 eV while keeping constant the nanostructures density at 2×108 cm−2. Moreover, the capping growth process of these QD shows mounding features that permit their spatial identification once embedded by a GaAs capping layer.
Publisher version (URL)http://dx.doi.org/10.1063/1.3021070
Appears in Collections:(IMN-CNM) Artículos
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