Characterizing integration time and gray-level-related nonlinearities in a NMOS sensor

Abstract

We report a nonlinearity effect related to the integration time in a double-beam spectroradiometer equipped with two negative-module metal-oxide semiconductor (NMOS) sensors. This effect can be explained by the addition of photoelectrons produced by the radiant flux on the sensors during the read-out phase to the photoelectrons produced during the measurement phase. A new method is proposed to characterize and correct both gray-level and integration-time-related nonlinearities in NMOS sensors. This method is experimentally simple and outperforms other commonly used correction procedures. (C) 2014 Optical Society of America.