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Título: | Dynamics of fast pattern formation in porous silicon by laser interference |
Autor: | Peláez, Ramón J. CSIC ORCID; Kuhn, Timo CSIC ORCID; Vega, Fidel CSIC ORCID; Afonso, Carmen N. CSIC | Palabras clave: | Solidification Surface patterning Pattern formation Nanopatterning Reflectivity |
Fecha de publicación: | 2014 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 105: 161911 (2014) | Resumen: | © 2014 AIP Publishing LLC. Patterns are fabricated on 290 nm thick nanostructured porous silicon layers by phase-mask laser interference using single pulses of an excimer laser (193 nm, 20 ns pulse duration). The dynamics of pattern formation is studied by measuring in real time the intensity of the diffraction orders 0 and 1 at 633 nm. The results show that a transient pattern is formed upon melting at intensity maxima sites within a time <30 ns leading to a permanent pattern in a time <100 ns upon solidification at these sites. This fast process is compared to the longer one (>1-μs) upon melting induced by homogeneous beam exposure and related to the different scenario for releasing the heat from hot regions. The diffraction efficiency of the pattern is finally controlled by a combination of laser fluence and initial thickness of the nanostructured porous silicon layer and the present results open perspectives on heat release management upon laser exposure as well as have potential for alternative routes for switching applications. | URI: | http://hdl.handle.net/10261/111445 | DOI: | 10.1063/1.4900431 | Identificadores: | doi: 10.1063/1.4900431 issn: 0003-6951 |
Aparece en las colecciones: | (CFMAC-IO) Artículos |
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Dynamics.pdf | 899 kB | Adobe PDF | Visualizar/Abrir |
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