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Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

AuthorsValentini, L.; Cardinali, M.; Fortunati, E.; Kenny, José María
Issue Date2014
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 105 (2014)
AbstractWith the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.
Identifiersdoi: 10.1063/1.4898601
issn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(ICTP) Artículos
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