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Role of geometry, substrate and atmosphere on performance of OFETs based on TTF derivatives

AutorMarszalek, T.; Nosal, T.; Pfattner, Raphael ; Jung, J.; Kotarba, S.; Mas Torrent, Marta ; Krause, B.; Veciana, Jaume ; Gazicki-Lipman, M.; Crickert, C; Schmidt, G.; Rovira, Concepció ; Ulanski, J.
Palabras claveThin films
Organic transistor.
Organic field-effect transistors
Tetrathiafulvalene derivatives
Fecha de publicación2012
EditorElsevier
CitaciónOrganic Electronics: physics, materials, applications 13(1): 121-128 (2012)
ResumenWe report a comparative study of OFET devices based on zone-cast layers of three tetrathiafulvalene (TTF) derivatives in three configurations of electrodes in order to determine the best performing geometry. The first testing experiments were performed using SiO 2/Si substrates. Then the optimum geometry was employed for the preparation of flexible OFETs using Parylene C as both substrate and dielectric layer yielding, in the best case, to devices with μ FET = 0.1 cm 2/V s. With the performed bending tests we determined the limit of curvature radius for which the performance of the OFETs is not deteriorated irreversibly. The investigated OFETs are sensitive to ambient atmosphere, showing reversible increase of the source to drain current upon exposition to air, what can be explained as doping of TTF derivative by oxygen or moisture. © 2011 Elsevier B.V. All rights reserved.
URIhttp://hdl.handle.net/10261/103479
DOI10.1016/j.orgel.2011.10.001
Identificadoresdoi: 10.1016/j.orgel.2011.10.001
issn: 1566-1199
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