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Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

AutorCanet-Ferrer, J.; Muñoz-Matutano, G.; Herranz Zamorano, Jesús ; Rivas, D.; Alén, Benito ; González Díez, Yolanda ; Fuster, David ; González Sotos, Luisa ; Martínez-Pastor, Juan
Fecha de publicación2013
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 103(18): 183112 (2013)
ResumenWe have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies. © 2013 AIP Publishing LLC.
Versión del editorhttp://dx.doi.org/10.1063/1.4828352
URIhttp://hdl.handle.net/10261/103450
DOI10.1063/1.4828352
Identificadoresissn: 0003-6951
e-issn: 1077-3118
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