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Título

Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

Autor Rozada Rodríguez, Rubén ; Solís Fernández, Pablo ; Paredes Nachón, Juan Ignacio ; Martínez Alonso, Amelia ; Ago, H.; Díez Tascón, Juan Manuel
Fecha de publicación 2014
EditorElsevier
Citación Carbon 79: 664-669 (2014)
ResumenThe introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwave-induced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103–105 μm−2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.
Versión del editorhttp://dx.doi.org/10.1016/j.carbon.2014.08.015
URI http://hdl.handle.net/10261/103431
DOI10.1016/j.carbon.2014.08.015
ISSN0008-6223
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