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Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

AuthorsAlén, Benito ; Fuster, David ; Muñoz-Matutano, G.; Alonso-González, Pablo ; Canet-Ferrer, J.; Martínez Pastor, Juan Pascual ; Fernández-Martínez, Iván ; Royo, M. ; Climente, J. I.; González Díez, Yolanda ; Briones Fernández-Pola, Fernando ; Molina, Sergio I.; González Sotos, Luisa
Issue Date2010
PublisherAmerican Institute of Physics
CitationAIP Conference Proceedings 1399: 421 (2010)
AbstractThe emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.
DescriptionTrabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.
Identifiersdoi: 10.1063/1.3666433
issn: 0094-243X
e-issn: 1551-7616
Appears in Collections:(IMN-CNM) Artículos
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