English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/103399
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Low temperature oxide desorption in GaAs (111)A substrates

AuthorsFuster, David ; Ginés Bartolomé, Laia ; González Díez, Yolanda ; Herranz Zamorano, Jesús ; González Sotos, Luisa
KeywordsGallium arsenide (111)A
Molecular beam epitaxy
Oxide desorption
Issue Date2013
CitationThin Solid Films 537: 70-75 (2013)
AbstractThe aim of this work is to study oxide removal processes on GaAs (111) A substrates previous to epitaxial growth. We have studied conventional thermal desorption and processes based on the reduction of surface oxides by deposition of gallium, indium and exposure to atomic hydrogen. We have determined substrate temperatures (Ts) for optimum oxide removal in epi-ready substrates by the different studied processes: Ts = 540 °C for thermal desorption, Ts = 505 °C for indium deposition and Ts = 400 °C for oxide desorption by exposure to atomic hydrogen. All these processes allow for a subsequent good quality epitaxial growth. These results cannot be directly extended to oxide removal in grown samples that have been exposed to air outside the growth chamber. In this case, we have found that only indium deposition and exposure to atomic hydrogen are compatible with regrowth processes.
Publisher version (URL)http://dx.doi.org/10.1016/j.tsf.2013.04.044
Identifiersdoi: 10.1016/j.tsf.2013.04.044
issn: 0040-6090
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Low temperature oxide .pdf3,22 MBUnknownView/Open
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.