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Electronic structure of topological insulators

Autor Chulkov, Eugene V. ; Menshchikova, T. V.; Vergniory, M.; Eremeev, S. V.; Bihlmayer, G.; Koroteev, Yuri M.; Henk, J.; Ernst, A.
Fecha de publicación 2011
EditorCSIC-UPV - Centro de Física de Materiales (CFM)
Citación 3S'11
ResumenA 3D topological insulator (TI) is a new state of matter which shows exotic surfaces properties. Being narrow gap semiconductors in bulk, topological insulators exhibit a surface state (SS) that makes the surface conducting. This surface state shows linear dispersion, forming a Dirac cone with a crossing (Dirac) point at/around the Fermi level. In contrast to the Dirac cone in graphene this topological SS is spin-orbit split and carries only one electron per momentum with a spin that changes its direction consistently with a change of momentum. The topological origin of the SS protects the Dirac cone from surface perturbations, even under such a strong perturbation as removing of the surface Te(Se) atomic layer from tellurium (selenium) chalcogenides this surface state survives. The unique surface properties of TIs make these materials important for many applications, in particular, in spintronics and quantum computing. Here we present ab-initio calculated results for electronic structure of Tl- and In-based narrow gap semiconductors as well as for binary and ternary compounds with tetradymite-type crystal structure. We show that some of these compounds are strong 3D topological insulators showing non-trivial topological Z2 invariant and a Dirac cone at the centre of the surface Brillouion zone Γ. Peculiarities of charge density behaviour of the Dirac state are discussed and compared to that of conventional surface states including Rashba-split surface states. The obtained results are also compared to recent photoemission data.
Descripción Trabajo presentado al "Symposium on Surface Science" celebrado en Baqueira-Beret (España) del 6 al 12 de Marzo de 2011.-- Tambien presentado al "13th of Trends in Nanotechnology International Conference (TNT2012)" celebrado en Madrid (España) del 10 al 14 de Septiembre de 2012.
URI http://hdl.handle.net/10261/103225
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