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Electronic properties and band structure analysis of ternary topological insulator's alloys

AutorVergniory, M.; Zubizarreta, X. ; Menshchikova, T. V.; Henk, J.; Ernst, A.; Chulkov, Eugene V.
Fecha de publicación2012
CitaciónICSFS-16 (2012)
ResumenThree-dimensional topological insulators (TIs) have attracted extensive interest due to their unique electronic properties and applications. These kind of materials are narrow gap semiconductors characterized by an inverted energy gap caused by spin-orbit coupling (SOC). TIs possess spin-momentum-locked surface states with linear dispersion forming a Dirac cone with a crossing point at/near the Fermi level. Motivated by their application potential several families of TIs have been proposed theoretically and confirmed experimentally. Among them the binary layered compounds Bi2Se3, Bi2Te3 and Sb2Te3 are the most studied ones. One of the challenges faced by current investigations of these new type of materials is the significant amount of bulk carriers in transport measurements of the latter binary compounds. One way to to decrease bulk carriers could be to design alloys based on the binary compounds where the Dirac point will be moved far from the bulk bands. In this work we present the bulk and surface properties of Se,Te,Sb and Bi based ternary alloys for different concentrations of the constituents. In our results we will present the evolution of the gap, the dispersion of the Dirac cone and its postilion with respect to the Fermi energy, from one binary compound to the another one increasing and decreasing the third element concentration (for Ex: from Bi2Te3 to Bi2Se3 through Bi2Se{3-x}Tex). We will show that for specific concentration of the alloy we find more appropriate TIs for computing applications.
DescripciónTrabajo presentado a la "16th International Conference on Solid Films and Surfaces" celebrada en Genova (Italia) del 1 al 6 de julio de 2012.
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