English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/102664
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

DC FieldValueLanguage
dc.contributor.authorLigges, M.-
dc.contributor.authorSklyadneva, Irina Yu.-
dc.contributor.authorHeid, Rolf-
dc.contributor.authorBohnen, Klaus-Peter-
dc.contributor.authorEchenique, Pedro M.-
dc.contributor.authorChulkov, Eugene V.-
dc.contributor.authorBovensiepen, U.-
dc.identifierdoi: 10.1088/0953-8984/26/35/352001-
dc.identifiere-issn: 1361-648X-
dc.identifierissn: 0953-8984-
dc.identifier.citationJournal of Physics: Condensed Matter 26(35): 352001 (2014)-
dc.description.abstractThe electron-phonon coupling parameters in the vicinity of the γ̄ point, λ(γ̄), for electronic quantum well states in epitaxial lead films on a Si(1 1 1) substrate are measured using 5, 7 and 12ML films and femtosecond laser photoemission spectroscopy. The λ (γ̄) values in the range of 0.6-0.9 were obtained by temperature-dependent line width analysis of occupied quantum well states and found to be considerably smaller than the momentum averaged electron-phonon coupling at the Fermi level of bulk lead, (λ = 1.1-1.7). The results are compared to density functional theory calculations of the lead films with and without interfacial stress. It is shown that the discrepancy can not be explained by means of confinement effects or simple structural modifications of the Pb films and, thus, is attributed to the influence of the substrate on the Pb electronic and vibrational structures. © 2014 IOP Publishing Ltd.-
dc.description.sponsorshipFinancial support by the Deutsche Forschungsgemeinschaft through SFB 616, BO-1823/2 and FOR 1700 is gratefully acknowledged.We also acknowledge partial support from the Basque Country Government, Departamento de Educación, Universidades e Investigación (Grant No. IT-366-07), and the Spanish Ministerio de Ciencia e Innovación (Grant No. FIS2010-19609-C02-00), and 00), and the Ministry of Education and Science of Russian Federation (Grant No. 2.8575.2013).-
dc.publisherInstitute of Physics Publishing-
dc.subjectDensity functional theory-
dc.subjectElectron–phonon coupling-
dc.subjectQuantum well states-
dc.titleElectron-phonon coupling in quantum-well states of the Pb/Si(1 1 1) system-
dc.description.versionPeer Reviewed-
dc.contributor.funderGerman Research Foundation-
dc.contributor.funderEusko Jaurlaritza-
dc.contributor.funderMinisterio de Ciencia e Innovación (España)-
dc.contributor.funderMinistry of Education and Science of the Russian Federation-
Appears in Collections:(CFM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show simple item record

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.