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Título

Evidence for a direct band gap in the topological insulator Bi 2Se3 from theory and experiment

Autor Nechaev, I. A.; Hatch, R. C.; Bianchi, M.; Guan, D.; Friedrich, C.; Aguilera, I.; Mi, J. L.; Iversen, B. B.; Blügel, S.; Hofmann, Ph.; Chulkov, Eugene V.
Fecha de publicación 2013
EditorAmerican Physical Society
Citación Physical Review B 87: 121111(R) (2013)
ResumenUsing angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Γ point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence-band maximum is located at the Γ point only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center. © 2013 American Physical Society.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.87.121111
URI http://hdl.handle.net/10261/102407
DOI10.1103/PhysRevB.87.121111
Identificadoresdoi: 10.1103/PhysRevB.87.121111
issn: 1098-0121
e-issn: 1550-235X
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