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dc.contributor.authorMenshchikova, Tatiana V.-
dc.contributor.authorOtrokov, M. M.-
dc.contributor.authorTsirkin, S. S.-
dc.contributor.authorSamorokov, D. A.-
dc.contributor.authorBebneva, V. V.-
dc.contributor.authorErnst, A.-
dc.contributor.authorKuznetsov, V. M.-
dc.contributor.authorChulkov, Eugene V.-
dc.date.accessioned2014-09-23T07:56:17Z-
dc.date.available2014-09-23T07:56:17Z-
dc.date.issued2013-
dc.identifierdoi: 10.1021/nl403312y-
dc.identifierissn: 1530-6984-
dc.identifiere-issn: 1530-6992-
dc.identifier.citationNano Letters 13(12): 6064-6069 (2013)-
dc.identifier.urihttp://hdl.handle.net/10261/102353-
dc.description.abstractThe ability to engineer an electronic band structure of topological insulators would allow the production of topological materials with tailor-made properties. Using ab initio calculations, we show a promising way to control the conducting surface state in topological insulator based heterostructures representing an insulator ultrathin films on the topological insulator substrates. Because of a specific relation between work functions and band gaps of the topological insulator substrate and the insulator ultrathin film overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a topological insulator based heterostructure with a highly tunable topological surface state. © 2013 American Chemical Society.-
dc.description.sponsorshipWe acknowledge support by the Ministry of Education and Science of the Russian Federation (state task No. 2.8575.2013), the Federal Targeted Program “Scientific and scientific-pedagogical personnel of innovative Russia in 2009-2013” (No. 14.B37.21.1164) and Russian Foundation for Basic Research (Grant 13-02-12110 ofi_m). A.E. acknowledges funding by the German Research Foundation (DFG Grants ER 340/4-1 and the Priority Program 1666 “Topological Insulators”).-
dc.publisherAmerican Chemical Society-
dc.rightsclosedAccess-
dc.subjectHeterostructures-
dc.subjectElectric field-
dc.subjectElectronic structure-
dc.subjectTopological insulators-
dc.titleBand structure engineering in topological insulator based heterostructures-
dc.typeartículo-
dc.identifier.doi10.1021/nl403312y-
dc.date.updated2014-09-23T07:56:17Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
dc.contributor.funderMinistry of Education and Science of the Russian Federation-
dc.contributor.funderRussian Foundation for Basic Research-
dc.contributor.funderGerman Research Foundation-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003443es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100002261es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100001659es_ES
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