Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/102168
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Influence of the Ge-Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5 |
Autor: | Silkin, Igor V.; Koroteev, Yuri M.; Bihlmayer, Gustav; Chulkov, Eugene V. CSIC ORCID | Palabras clave: | Topological insulator Topological invariant Atomic composition Density functional theory Electronic structure |
Fecha de publicación: | 2013 | Editor: | Elsevier | Citación: | Applied Surface Science 267: 169-172 (2013) | Resumen: | We present ab initio calculations of an electronic structure and a topological invariant ν0 of the Ge2Sb 2Te5 compound. We have found that in the case of equiatomic composition of Ge/Sb layers the Ge2Sb2Te 5 compound is the topological insulator. The ν0 invariant does not depend on a specific location of Ge and Sb atoms in the mixed layers, and depends only on their concentration. The variation of the concentration in the Ge/Sb layers leads to a change of the topological invariant of the compound. © 2012 Elsevier B.V. All rights reserved. | URI: | http://hdl.handle.net/10261/102168 | DOI: | 10.1016/j.apsusc.2012.09.017 | Identificadores: | doi: 10.1016/j.apsusc.2012.09.017 issn: 0169-4332 |
Aparece en las colecciones: | (CFM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
12
checked on 16-mar-2024
WEB OF SCIENCETM
Citations
11
checked on 15-feb-2024
Page view(s)
281
checked on 18-mar-2024
Download(s)
122
checked on 18-mar-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.