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Bulk and surface electronic structure of SnBi4Te7 topological insulator

AuthorsVergniory, M.; Menshchikova, Tatiana V.; Eremeev, S. V.; Chulkov, Eugene V.
KeywordsSurface states
Topological insulators
Electronic structure
Issue Date2013
CitationApplied Surface Science 267: 146-149 (2013)
AbstractUsing density functional theory with the spin–orbit coupling included we analyze the bulk and surface electronic structure of SnBi4Te7 ternary compound. It was revealed that this material is a strong topological insulator with a bulk band gap of about 100 meV and a robust surface state around the Γ¯ point. We find that the topological nature of the surface state remains robust with different terminations of the surface.
Identifiersdoi: 10.1016/j.apsusc.2012.08.073
issn: 0169-4332
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