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SiGe quantum dots for fast hole spin Rabi oscillations

AuthorsAres, N.; Katsaros, G.; Golovach, V. N.; Zhang, J. J.; Prager, A.; Glazman, L. I.; Schmidt, O. G.; Franceschi, S. de
Issue Date2013
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 103(26): 263113 (2013)
AbstractWe report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique. © 2013 AIP Publishing LLC.
Publisher version (URL)http://dx.doi.org/10.1063/1.4858959
Identifiersdoi: 10.1063/1.4858959
issn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(CFM) Artículos
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