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Título: | Bottom-up graphene nanoribbon field-effect transistors |
Autor: | Bennett, Patrick B.; Pedramrazi, Zahra; Madani, Ali; Chen, Yen-Chia; Oteyza, Dimas G. de CSIC ORCID; Chen, Chen; Fischer, Felix R.; Crommie, Michael F.; Bokor, Jeffrey | Fecha de publicación: | 2013 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 103(25): 253114 (2013) | Resumen: | Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs. © 2013 AIP Publishing LLC. | Versión del editor: | http://dx.doi.org/10.1063/1.4855116 | URI: | http://hdl.handle.net/10261/102127 | DOI: | 10.1063/1.4855116 | Identificadores: | doi: 10.1063/1.4855116 issn: 0003-6951 e-issn: 1077-3118 |
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Bottom-up graphene.pdf | 1,11 MB | Adobe PDF | Visualizar/Abrir |
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