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dc.contributor.authorNiesner, D.-
dc.contributor.authorFauster, Th.-
dc.contributor.authorEremeev, S. V.-
dc.contributor.authorMenshchikova, Tatiana V.-
dc.contributor.authorKoroteev, Yuri M.-
dc.contributor.authorProtogenov, A. P.-
dc.contributor.authorChulkov, Eugene V.-
dc.identifierdoi: 10.1103/PhysRevB.86.205403-
dc.identifierissn: 1098-0121-
dc.identifiere-issn: 1550-235X-
dc.identifier.citationPhysical Review B 86: 205403 (2012)-
dc.descriptionet al.-
dc.description.abstractThe unoccupied part of the band structure of topological insulators Bi 2Te xSe 3-x (x=0,2,3) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly dispersing surface states are found at the center of the surface Brillouin zone at energies about 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit- interaction-induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi 2Se 3 and Bi 2Te 2Se. In Bi 2Te 3 small structural variations can change the character of the local energy gap, depending on whether or not an unoccupied Dirac state exists. Circular dichroism measurements confirm the expected spin texture. From these findings we assign the observed state to an unoccupied topological surface state. © 2012 American Physical Society.-
dc.description.sponsorshipE.V.C. acknowledges partial support from the Basque Country Government, Departamento de Educación, Universidades e Investigación (Grant No. IT-366-07), and the Spanish Ministerio de Ciencia e Innovación (Grant No. FIS2010-19609-02-00).-
dc.publisherAmerican Physical Society-
dc.relation.isversionofPublisher's version-
dc.titleUnoccupied topological states on bismuth chalcogenides-
dc.description.versionPeer Reviewed-
dc.contributor.funderEusko Jaurlaritza-
dc.contributor.funderEusko Jaurlaritza-
dc.contributor.funderMinisterio de Ciencia e Innovación (España)-
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