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Inertness and degradation of (0001) surface of Bi2Se3 topological insulator

AuthorsEremeev, S. V.; Borisova, S. D.; Chulkov, Eugene V.
Issue Date2012
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 112(11): 113702 (2012)
AbstractInertness of the cleaved (0001) surface of theBi 2 Se 3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on the low-defect, atomically flatBi 2 Se 3 (0001)−(1×1) surface after a long-time air exposure. The inertness ofBi 2 Se 3 (0001) toO 2 andNO 2 , as well as bismuth-oxygen bonding formation under molecular adsorption in the Se vacancy was supported by DFT calculations. © 2012 American Institute of Physics.
Descriptionet al.
Publisher version (URL)http://dx.doi.org/10.1063/1.4767458
Identifiersdoi: 10.1063/1.4767458
issn: 0021-8979
e-issn: 1089-7550
Appears in Collections:(CFM) Artículos
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