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http://hdl.handle.net/10261/101700
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Men'shov, V. N. | - |
dc.contributor.author | Tugushev, V. V. | - |
dc.contributor.author | Chulkov, Eugene V. | - |
dc.date.accessioned | 2014-09-05T07:27:58Z | - |
dc.date.available | 2014-09-05T07:27:58Z | - |
dc.date.issued | 2012 | - |
dc.identifier | doi: 10.1134/S0021364012190113 | - |
dc.identifier | issn: 0021-3640 | - |
dc.identifier | e-issn: 1090-6487 | - |
dc.identifier.citation | JETP Letters 96(7): 445-451 (2012) | - |
dc.identifier.uri | http://hdl.handle.net/10261/101700 | - |
dc.description.abstract | We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi2Se3-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the Γ point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi2Se3-type semiconductors. © 2012 Pleiades Publishing, Ltd. | - |
dc.publisher | Springer Nature | - |
dc.rights | closedAccess | - |
dc.title | Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator | - |
dc.type | artículo | - |
dc.identifier.doi | 10.1134/S0021364012190113 | - |
dc.date.updated | 2014-09-05T07:27:58Z | - |
dc.description.version | Peer Reviewed | - |
dc.language.rfc3066 | eng | - |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | No Fulltext | - |
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accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
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