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Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator

AuthorsMen'shov, V. N.; Tugushev, V. V.; Chulkov, Eugene V.
Issue Date2012
CitationJETP Letters 96(7): 445-451 (2012)
AbstractWe report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi2Se3-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the Γ point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi2Se3-type semiconductors. © 2012 Pleiades Publishing, Ltd.
Identifiersdoi: 10.1134/S0021364012190113
issn: 0021-3640
e-issn: 1090-6487
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