2024-03-28T14:50:49Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/605932021-10-27T07:42:31Zcom_10261_46com_10261_3com_10261_31com_10261_44com_10261_4com_10261_36col_10261_299col_10261_284col_10261_297col_10261_289
Thermal stability of Mo/Au bilayers for TES applications
Parra-Borderías, María
Fernández-Martínez, Iván
Fàbrega, Lourdes
Camón, Agustín
Gil García, Óscar
González-Arrabal, Raquel
Sesé Monclús, Javier
Costa Krämer, José Luis
Briones Fernández-Pola, Fernando
Ministerio de Ciencia e Innovación (España)
European Commission
Mo/Au bilayers are among the most suitable materials to be used as transition-edge sensors (TES) in cryogenic microcalorimeters and bolometers, developed, among other fields, for space missions. For this purpose the thermal stability of TES at temperatures below 150°C is a critical issue. We report on the dependence of functional properties (superconducting critical temperature, residual resistance and α) as well as on microstructure, chemical composition and interface quality for optimized high quality Mo/Au bilayers on annealing temperature and time. Data show that the functional properties of the bilayers remain stable at T<150°C, but changes in microstructure, interface quality and functional properties were observed for layers heated at T > 200°C. Microstructural and chemical composition data suggest that the measured changes in residual resistance ratio (RRR) and T C at T > 200°C are mainly due to an increase in the average Au grain size and to Au migration along the Mo grain boundaries at the Au/Mo interface. A way to stabilize the functional properties of the Mo/Au bilayers against temperature enhancements is proposed. © 2012 IOP Publishing Ltd.
2012-11-20T08:31:00Z
2012-11-20T08:31:00Z
2012-06-26
2012-11-20T08:31:00Z
artículo
Superconductor Science and Technology 25(9): 095001 (2012)
http://hdl.handle.net/10261/60593
10.1088/0953-2048/25/9/095001
http://dx.doi.org/10.13039/501100004837
http://dx.doi.org/10.13039/501100000780
eng
Postprint
http://dx.doi.org/10.1088/0953-2048/25/9/095001
Sí
openAccess
Institute of Physics Publishing