2024-03-28T14:09:10Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1350802021-10-29T07:20:26Zcom_10261_46com_10261_3com_10261_10252col_10261_299col_10261_10253
Thermal rectification in silicon by a graded distribution of defects
Dettori, Riccardo
Melis, Claudio
Rurali, Riccardo
Colombo, Luciano
Ministerio de Economía y Competitividad (España)
Generalitat de Catalunya
Regione Autonoma della Sardegna
Rectification
Germanium
Thermal conductivity
Elemental semiconductors
Interface structure
We discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. We consider a graded population of both Ge substitutional defects and nanovoids, distributed along the direction of an applied thermal bias, and predict a rectification factor comparable to what is observed in other low–dimensional Si–based nanostructures. By considering several defect distribution profiles, thermal bias conditions, and sample sizes, the present results suggest that a possible way for tuning the thermal rectification is by defect engineering.
2016-07-27T10:31:54Z
2016-07-27T10:31:54Z
2016-06-07
artículo
Journal of Applied Physics 119(21): 215102 (2016)
0021-8979
http://hdl.handle.net/10261/135080
10.1063/1.4953142
http://dx.doi.org/10.13039/501100003329
http://dx.doi.org/10.13039/501100002809
http://dx.doi.org/10.13039/501100009873
eng
Publisher's version
http://dx.doi.org/10.1063/1.4953142
Sí
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2013-40581-P
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2015-67462-C2-1-R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2013-0295
openAccess
American Institute of Physics