2024-03-28T07:56:45Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/221272018-07-10T11:55:05Zcom_10261_82com_10261_8col_10261_335
Raman-scattering study of the InGaN alloy over the whole composition range
Hernández, S.
Cuscó, Ramón
Pastor, D.
Artús, Lluís
O'Donnell, K. P.
Martin, R. W.
Watson, I. M.
Nanishi, Yasushi
Calleja, E.
5 pages, 3 figures.
We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.
This work has been supported by the Spanish Ministry
of Science and Technology under Contract No. MAT2001-
1878. One of the authors (S.H.) acknowledges financial support
from the Spanish Ministry of Education and Science.
Peer reviewed
2010-03-09T11:15:22Z
2010-03-09T11:15:22Z
2005-07-05
artículo
http://purl.org/coar/resource_type/c_6501
Journal of Applied Physics 98(1): 013511 (2005)
0021-8979
http://hdl.handle.net/10261/22127
10.1063/1.1940139
en
http://dx.doi.org/10.1063/1.1940139
open
94682 bytes
application/pdf
American Institute of Physics