2024-03-28T22:27:31Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/210672016-02-16T06:24:01Zcom_10261_4872com_10261_4col_10261_4873
Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics
García García, Nicolás
Muñoz, Manuel
Qian, G. G.
Rohrer, Heinrich
Saveliev, I. G.
Zhao, Y. W.
3 pages, 2 figures.
We present experimental results of unprecedented large magnetoresistance obtained in stable electrodeposited Ni–Ni nanocontacts 10–30 nm in diameter. The contacts exhibit magnetoresistance of up to 700% at room temperature and low applied fields and, therefore, act as very effective spin filters. These large values of the magnetoresistance are attributed to spin ballistic transport through a magnetic "dead layer" at the contact of width of about 1 nm or smaller. Nanometer sized, high sensitive magnetoresistive sensors could become key elements for magnetic storage in the terabit/in.2 range and in high density magnetic random access memories.
This work was supported by EU Contract No. IST 2000-
26011.
Peer reviewed
2010-02-15T11:17:51Z
2010-02-15T11:17:51Z
2001-12-31
artículo
http://purl.org/coar/resource_type/c_6501
Applied Physics Letters 79(27): 4550 (2001)
0003-6951
http://hdl.handle.net/10261/21067
10.1063/1.1427152
en
http://dx.doi.org/10.1063/1.1427152
open
223193 bytes
application/pdf
American Institute of Physics