2024-03-29T10:20:00Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/208972017-07-27T12:48:14Zcom_10261_89com_10261_3col_10261_342
Depth-resolved microspectroscopy of porous silicon multilayers
Manotas, S.
Agulló Rueda, F.
Moreno, J. D.
Martín-Palma, Raúl J.
Guerrero Lemus, R.
Martínez Duart, J. M.
3 pages, 3 figures.
We have measured depth-resolved microphotoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. The PL emission band gets stronger, blueshifts, and narrows at the high porosity layers. On the contrary, the Raman band weakens and broadens. This band is fitted to the phonon confinement model. With the bulk silicon phonon frequency and its linewidth as free parameters, we obtain crystallite size, temperature, and stress as a function of depth. Sizes are larger than those estimated from PL. Laser power was reduced to eliminate heating effects. Compressive stresses in excess of 10 kbar are found in the deepest layer due to the lattice mismatch with the substrate.
The authors acknowledge financial support from the
Spanish CICyT (Project Nos. MAT96-0395-CP and MAT97-
0725).
Peer reviewed
2010-02-10T10:47:46Z
2010-02-10T10:47:46Z
1999-08-16
artículo
http://purl.org/coar/resource_type/c_6501
Applied Physics Letters 75(7): 977 (1999)
0003-6951
http://hdl.handle.net/10261/20897
10.1063/1.124572
en
http://dx.doi.org/10.1063/1.124572
open
363852 bytes
application/pdf
American Institute of Physics