2024-03-29T08:20:59Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1365932016-09-13T01:26:08Zcom_10261_31com_10261_3col_10261_1292
Spin seebeck thermoelectric device and its uses
Morellón, Luis
Algarabel, Pedro A.
Adachi, Hiroto
The present invention relates to a thermoelectric device which comprises: a layer of a non-magnetic material (NM) disposed over a layer of a magnetic material (F), wherein said layers form a first bi-layer junction (NM1/F1) of materials having spin Seebeck effect properties; and at least one second bi-layer junction of non-magnetic and magnetic materials (NM2/F2) having spin current transmission properties; wherein the second bi-layer junction (NM2/F2) is arranged to form, together with the first bi-layer junction (NM1/F1), a multilayer structure of materials having an amplified spin Seebeck effect compared to that of the first bi-layer junction (NM1/F1) alone. An optimized device can be obtained by stacking sequences of these bi-layers in a multilayered structure n×(NM/F). The invention provides improved spin Seebeck thermoelectric devices, through a novel arrangement of materials which provide a substantial amplification of the spin pumped currents within the multilayer structure, thus generating enhanced voltage signals compared to those present in the prior art.
Peer reviewed
Universidad de Zaragoza, Consejo Superior de Investigaciones Científicas (España), Japan Atomic Energy Agency (JAEA), Tohoku University, Fundación Aragonesa para la Investigación y el Desarrollo (ARAID)
A1 Solicitud de patente con informe sobre el estado de la técnica
2016-09-12T07:03:50Z
2016-09-12T07:03:50Z
2016-05-06
2014-10-31
solicitud de patente
WO2016066216 A1
http://hdl.handle.net/10261/136593
PCT/EP2014/073451
en
Sí
open