2024-03-28T15:50:12Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/482942016-08-17T12:51:05Zcom_10261_36com_10261_4col_10261_289
Sánchez, A. M.
González Taboada, Alfonso
Ripalda, José María
Molina, Sergio I.
2012-04-16T09:31:49Z
2012-04-16T09:31:49Z
2010-03-10
Nanotechnology 21: 145606 (2010)
0957-4484
http://hdl.handle.net/10261/48294
10.1088/0957-4484/21/14/145606
The addition of antimony to III–V nanostructures is expected to give greater freedom in
bandgap engineering for device applications. One of the main challenges to overcome is the
effect of indium and antimony surface segregation. Using several very high resolution analysis
techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore,
indium incorporation resumes when the antimony concentration drops below a critical level.
This leads to major differences between nominal and actual structures.
eng
closedAccess
Blocking of indium incorporation by antimony in III–V-Sb nanostructures
artículo