2024-03-28T19:50:45Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/243052017-02-27T16:48:21Zcom_10261_36com_10261_4col_10261_289
Urbaszek, B.
McGhee, E. J.
Krüger, M.
Warburton, Richard J.
Karrai, Khaled
Amand, T.
Gerardot, B. D.
Petroff, Pierre M.
García Martínez, Jorge Manuel
2010-05-14T08:23:17Z
2010-05-14T08:23:17Z
2004-01-08
Physical Review B 69, 035304 (2004)
1098-0121
http://hdl.handle.net/10261/24305
10.1103/PhysRevB.69.035304
We report temperature-dependent photoluminescence on neutral and charged excitons in individual InAs quantum dots. We find narrow emission lines for temperatures up to 30 K for exciton transitions where only the electron ground state is occupied. In contrast, for doubly charged excitons where the excited electron state is occupied, we observe a drastic increase of the ground state transition linewidth even at 30 K. We interpret this as evidence that the excited electron state is degenerate with the low energy tail of continuum states.
eng
openAccess
Excitons
Semiconductor quantum dots
Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
artículo